Comparison of current-voltage characteristics of molybdenum ditelluride and black phosphorene channel material based field effect transistor to optimize conductance
نویسندگان
چکیده
Abstract The work aims to improve the current and conductance characteristics of Molybdenum ditelluride Black phosphorene in a novel 2D Field Effect transistor for different thickness level oxide from 1 nm 10 nm. Materials Methods: channel-based was chosen as two groups having 16 samples each. were simulated by varying thickness. Reducing MOTE2 will lead increased characteristics. FET is obtain better based on nanotechnology reducing BP FET. Results: Novel has higher than Gate at during maximum conductivity NanoHub simulation tool. results obtained with significance value 0.001 0.0001 conductance, pretest power 80% using SPSS tools. Conclusion: Within limit study, Field-effect (2876.39) (9.587e-03) mho (1250.58) (4.168e-03) mho.
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ژورنال
عنوان ژورنال: Journal of physics
سال: 2023
ISSN: ['0022-3700', '1747-3721', '0368-3508', '1747-3713']
DOI: https://doi.org/10.1088/1742-6596/2484/1/012005